Wafer cleaning system WCS-200

 

  • High pressure or atomized spray cleaning
  • User friendly touch screen interface
  • Quick start button for repeatable process
  • Automatic transparent cover
  • CDA and N2 input sensors

Wafer cleaning system WCS-200

WCS-200 is designed for wafer cleaning after dicing. The system is available in two configurations: wafers up to 8” and wafers up to 12”.

Wafer cleaning process is configured through user friendly touch screen display. User can program up to 50 recipes with 4 steps:

  • Rinsing
  • Cleaning
  • N2 Drying
  • Rotating

Each step may have different speed and time parameters. 

Spinner module
Spinner module

PLC control panel
PLC control panel

Secification:

 

Wafer size, max, mm

8”/12”

Wafer cleaning parameters:
  • Speed;
  • Acceleration;
  • Cleaning time;
  • Rinsing time;
  • N2 Drying time;
 
Spinning speed, rpm

500-3000

Supply voltage

 230VAC 50Hz 5A

CDA supply pressure, MPa

0,5-0,6

CDA consumption, max, m3/h

3

CDA tube connection, mm

6

DI-water supply pressure, MPa

 0,2-0,3

DI-water consumption, max, L/h

100

DI-water tube connection, mm

6

Vacuum supply, MPa

 0,02-0,04

Vacuum tube connection, mm

6

Exhaust connection, mm

50

Dimensions, mm

900x780x1280

Weight, kg

110